TRIPHENYLSULFONIUM TRIFLATE

PRODUCT IDENTIFICATION

CAS NO. 66003-78-9; 130595-32-3; 181429-64-1; 220122-79-2

TRIPHENYLSULFONIUM TRIFLATE

EINECS  NO.  
FORMULA CF3SO3S(C6H5)3
MOL WT. 412.45
H.S. CODE

 

TOXICITY

 

SYNONYMS Triphenylsulfonium trifluoromethanesulfonate;
Trifluoromethanesulfonate tri(phenyl)sulfanium; Triphenylsulfonium 1,1,1-trifluoromethanesulfonate;
SMILES
 

CLASSIFICATION

 

PHYSICAL AND CHEMICAL PROPERTIES

PHYSICAL STATE White crystals
MELTING POINT

133 - 134 C

BOILING POINT  
SPECIFIC GRAVITY

 

SOLUBILITY IN WATER  
pH  
VAPOR DENSITY  
AUTOIGNITION

 

NFPA RATINGS  

REFRACTIVE INDEX

 

FLASH POINT  
STABILITY Stable under ordinary conditions.

GENERAL DESCRIPTION & APPLICATIONS

Photoacid generators (or PAGs) are cationic photoinitiators. A photoinitiator is a compound especially added to a formulation to convert absorbed light energy, UV or visible light, into chemical energy in the form of initiating species, viz., free radicals or cations. Cationic photoinitiators are used extensively in optical lithography. The ability of some types of cationic photoinitiators to serve as latent photochemical sources of very strong protonic or Lewis acids is the basis for their use in photoimaging applications. The continuing decrease in device dimensions in the microelectronics industry is being achieved by pushing the limits of optical lithography. In chemically amplified resist technology, the radiation-sensitive material (resist) in which patterns are delineated typically includes a matrix polymer and an onium salt photoacid generator (or PAG). There are several materials’ issues to be considered in the choice of the PAG: sufficient radiation sensitivity to ensure adequate acid generation for good resist sensitivity, absence of metallic elements, temperature stability, etc.

The usual photo-supplied catalyst has been strong acid. Triarylsulfonium and diaryliodonium salts have become the standard PAG ingredients in CA resist formulations, because of their generally easy synthesis, thermal stability, high quantum yield for acid (and also radical) generation, and the strength and nonvolatility of the acids they supply. Simple onium salts are directly sensitive to DUV, X-ray and electron radiations, and can be structurally tailored, or mixed with photosensitizers, to also perform well at mid-UV and longer wavelengths. However, onium salts are ionic and many will phaseseparate from some apolar polymers, or not dissolve completely in some casting solvents. Nonionic PAGs such as phloroglucinyl and o,o-dinitrobenzyl sulfonates, benzylsulfones and some 1,1,1-trihalides are more compatible with hydrophobic media in general, although their thermal stabilities and quantum yields for acid generation are often lower.

The phenomenal rate of increase in the integration density of silicon chips has been sustained in large part by advances in optical lithography – the process, as described above, that patterns and guides the fabrication of the component semiconductor devices and circuitry. Although the introduction of shorter-wavelength light sources and resolution enhancement techniques should help maintain the current rate of device miniaturization for several more years, a point will be reached where optical lithography can no longer attain the required feature sizes. Several alternative lithographic techniques under development have the capability to overcome these resolution limits – EUV, X-ray, electron beam and ion beam lithographies, but, at present, no obvious successor to optical lithography has emerged. (source: http://www.sigmaaldrich.com/)

Photoacid

CAS RN.

Diphenyliodonium nitrate

722-56-5

Diphenyliodonium p-toluenesulfonate

6293-66-9

2-(4-Methoxystyryl)-4,6-bis(trichloromethyl)-1,3,5-triazine

42573-57-9

Diphenyliodonium hexafluorophosphate

58109-40-3

Triphenylsulfonium triflate

66003-78-9

Diphenyliodonium triflate

66003-76-7

(4-Methylphenyl)diphenylsulfonium triflate

81416-37-7

Bis(4-tert-butylphenyl)iodonium triflate

84563-54-2

N-Hydroxynaphthalimide triflate

85342-62-7

Triarylsulfonium hexafluorophosphate salt

109037-77-6

(4-Phenylthiophenyl)diphenylsulfonium triflate

111281-12-0

(4-Methoxyphenyl)diphenylsulfonium triflate

116808-67-4

Bis(4-tert-butylphenyl)iodonium p-toluenesulfonate

131717-99-2

Tris(4-tert-butylphenyl)sulfonium triflate

134708-14-8

Diphenyliodonium 9,10-dimethoxyanthracene-2-sulfonate

137308-86-2

Triphenylsulfonium perfluoro-1-butanesufonate

144317-44-2

(4-tert-Butylphenyl)diphenylsulfonium triflate

145612-66-4

(4-Fluorophenyl)diphenylsulfonium triflate

154093-57-9

Boc-methoxyphenyldiphenylsulfonium triflate

180801-55-2

(4-Methylthiophenyl)methyl phenyl sulfonium triflate

187868-29-7

Diphenyliodonium perfluoro-1-butanesulfonate

194999-82-1

Bis(4-tert-butylphenyl)iodonium perfluoro-1-butanesulfonate

194999-85-4

(4-Phenoxyphenyl)diphenylsulfonium triflate

240482-96-6

Tris(4-tert-butylphenyl)sulfonium perfluoro-1-butanesulfonate

241806-75-7

(4-Bromophenyl)diphenylsulfonium triflate

255056-44-1

(tert-Butoxycarbonylmethoxynaphthyl)-diphenylsulfonium triflate

255056-48-5

(4-Chlorophenyl)diphenylsulfonium triflate

255056-43-0

(4-Iodophenyl)diphenylsulfonium triflate

255056-46-3

N-Hydroxy-5-norbornene-2,3-dicarboximide perfluoro-1-butanesulfonate

307531-76-6
SALES SPECIFICATION

APPEARANCE

White crystals
MELTING POINT

133 - 134 C

λmax

233 nm

TRANSPORTATION
PACKING  
HAZARD CLASS  
UN NO.  
OTHER INFORMATION
Hazard Symbols: XI, Risk Phrases: 36/37/38, Safety Phrases: 26
PRICES
U$1,400.- (100g)
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